3.9 C/W

-55°C to +150°C

+300°C

-40°C to +125°C

+150°C

@ 25°C unless otherwise specified

All Inputs Off

f=20KHz, 50% Duty Cycle

V+=38V

SWR Resistor=

∞

SWR Resistor=

∞

SWR=Open

SWR=12K

CONTROL SECTION

4

Undervoltage Threshold (Falling)

Undervoltage Threshold (Rising)

Low Level Input Voltage

High Level Input Voltage

Low Level Input Current

High Level Input Current

OUTPUT BRIDGE

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Drain-Source On Resistance (Each FET)

1

Voltage Drop Across Bridge Phase 2 4

SWITCHING CHARACTERISTICS

Rise Time

Fall Time

Enable Turn-On Prop Delay (Lower)

Enable Turn-Off Prop Delay (Lower)

Enable Turn-On Prop Delay (Upper)

Enable Turn-Off Prop Delay (Upper)

Dead Time

Dead Time 4

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward Voltage

Reverse Recovery Time

mAmp

mAmp

Volts

Volts

Volts

Volts

µAmp

µAmp

V

µAmp

Ω

VOLTS

nSec

nSec

µSec

µSec

µSec

µSec

µSec

µSec

Volts

nSec

75V

16V

10A

25A

High Voltage Supply

Bias Supply

Logic Input Voltages

Continuous Output Current

Peak Output Current

ABSOLUTE MAXIMUM RATINGS

V+

Thermal Resistance

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

Junction Temperature

Parameter

ELECTRICAL SPECIFICATIONS

Units

Max.

7

25

7.5

8.0

0.8

-

135

+1

-

50

0.033

1.5

-

-

-

-

-

-

8.0

0.7

1.7

-

MSK 4400

Typ. 3

6

22

6.6

7.1

-

-

100

-

-

-

-

1.3

62

58

100

100

2

2

7.0

0.5

-

120

Test Condition

2

Rev.E 6/01

1 Use for maximum MOSFET junction temperature calculations.

2 Use for overall efficiency and dissipation calculations.

3 Typical parameters are representative of actual device performance but are for reference only.

4 Parameter is 100% tested on production devices. All other parameters are guaranteed.

Min.

-

-

5.75

6.2

-

2.7

60

-1

75

-

-

-

-

-

-

-

-

-

6.0

0.3

-

-

NOTES: