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2STW200 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2STW200 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor 1 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2STW200 DESCRIPTION · With TO-3PN packaging · Very high DC current gain · Monolithic darlington transistor with integrated antiparallel collector-emitter diode · Complement to Type 2STW100 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · AC-DC motor control · Electronic ignition · Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IB Base Current -6 A PC Collector Power Dissipation 130 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.96 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
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