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STT5PF20V Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STT5PF20V Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 3/8 STT5PF20V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =10 V,ID = 2.5 A RG = 4.7Ω VGS =2.5 V (see test circuit, Figure 1) 11 ns tr Rise Time 47 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =10 V,ID =5 A, VGS = 2.5V (see test circuit, Figure 2) 4.5 0.73 1.75 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD =10 V,ID =2.5 A, RG =4.7Ω, VGS = 2.5 V (see test circuit, Figure 1) 38 20 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5 A ISDM Source-drain Current (pulsed) 20 A VSD (1) Forward On Voltage ISD = 5 A, VGS =0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs, VDD =16 V,Tj = 150°C (see test circuit, Figure 3) 32 12.8 0.8 ns nC A |
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