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BU323Z Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte BU323Z
Spiegazioni elettronici  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU323Z Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

  BU323Z Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU323Z Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
BU323Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=7A, IB= 0
350
V
VCE(sat)1
Collector-Emitter Saturation Voltage
IC= 7A ,IB= 70mA
1.6
V
VCE(sat)2
Collector-Emitter Saturation Voltage
IC= 8A ,IB= 0.1A
1.8
V
VCE(sat)3
Collector-Emitter Saturation Voltage
IC= 10A ,IB= 0.25A
1.7
V
VBE(sat)1
Base-Emitter Saturation Voltage
IC= 8A ,IB= 100mA
2.2
V
VBE(sat)2
Base-Emitter Saturation Voltage
IC= 10A ,IB= 0.25A
2.5
V
VBE(on)1
Base-Emitter On Voltage
IC= 5A ; VCE= 2V
2.1
V
VBE(on)2
Base-Emitter On Voltage
IC= 8A ; VCE= 5V
2.3
V
ICBO
Collector Cutoff Current
VCB=-350V, IE= 0
100
μ
A
ICEO
Collector Cutoff Current
VCE=200V, IB= 0
100
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
mA
hFE-1
DC Current Gain
IC= 6.5A ; VCE= 1.5V
150
hFE-2
DC Current Gain
IC= 5.0A ; VCE=4.6V
500
3400



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