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US1602G-S08-R Scheda tecnica(PDF) 4 Page - Unisonic Technologies |
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US1602G-S08-R Scheda tecnica(HTML) 4 Page - Unisonic Technologies |
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4 / 10 page ![]() US1602 LINEAR INTEGRATED CIRCUIT UNISONICTECHNOLOGIESCO.,LTD 4 of 10 www.unisonic.com.tw QW-R119.021.F ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT POWER MOS-TRANSISTOR SECTION Drain-Source Breakdown Voltage VDSS VGS=0V, ID=250μA 600 V Turn-on voltage between gate and source VTH VDS=VGS, ID=250μA 2 4 V Drain-Source Diode Continuous Source Current IS 2 A Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.8A 4 5.5 Ω Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. |
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