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LBAS70BST3G Scheda tecnica(PDF) 1 Page - Leshan Radio Company |
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LBAS70BST3G Scheda tecnica(HTML) 1 Page - Leshan Radio Company |
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1 / 4 page ![]() SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different pinning are available. LESHAN RADIO COMPANY, LTD. ORDERING INFORMATION We declare that the material of product compliance with RoHS requirements. Rev.B 1/4 1 2 Cathode Anode S-LBAS70BST5G SOD882 1 2 Device Marking Shipping 10000/Tape&Reel 5000/Tape&Reel 8000/Tape&Reel LBAS70BST5G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAS70BST5G R S-LBAS70BST5G LBAS70BST3G R S-LBAS70BST3G LBAS70BST1G R S-LBAS70BST1G |
Codice articolo simile - LBAS70BST3G |
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Descrizione simile - LBAS70BST3G |
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