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PAM8010 Scheda tecnica(PDF) 4 Page - Diodes Incorporated

Il numero della parte PAM8010
Spiegazioni elettronici  3W STEREO CLASS-D DC VOLUME, HEADPHONE and POWER LIMIT
PDF  17 Pages
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

PAM8010 Scheda tecnica(HTML) 4 Page - Diodes Incorporated

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PAM8010
Document number: DSxxxxx Rev. 1 - 0
4 of 17
www.diodes.com
November 2012
© Diodes Incorporated
PAM8010
A Product Line of
Diodes Incorporated
Thermal Information
Parameter
Package
Symbol
Max
Unit
Thermal Resistance (Junction to Ambient)
SSOP-24
θJA
96
°C/W
SOP-24
79.2
Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = Maximum, RL = 8Ω, unless otherwise specified.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Class D Stage
Supply Voltage Range
VDD
2.5
5.5
V
Quiescent Current
IQ
No Load
10
15
mA
Output Offset Voltage
VOS
No Load
10
30
mV
Drain-Source On-State Resistance
RDS(ON)
IDS = 0.5A
P MOSFET
0.21
Ω
N MOSFET
0.17
Output Power
PO
THD+N = 10%
f = 1kHz
RL = 8Ω
1.55
1.70
W
RL = 4Ω
2.85
3.0
Total Harmonic Distortion Plus Noise
THD+N
RL = 8Ω, PO = 0.85W, f = 1KHz
0.08
%
RL = 4Ω, PO = 1.75W, f = 1KHz
0.08
Power Supply Ripple Rejection
PSRR
Input AC-GND, f = 1KHz, VPP = 200mV
70
dB
Channel Separation
CS
PO = 1W, f = 1KHz
-95
dB
Oscillator Frequency
fOSC
200
250
300
kHz
Efficiency
η
PO = 1.7W, f =1 kHz, RL = 8Ω
85
90
%
PO = 3.0W, f =1 kHz, RL = 4Ω
80
83
%
Noise
VN
Input AC-GND
A-Weighting
60
µV
No A-Weighting
80
Signal Noise Ratio
SNR
f = 20 – 20kHz, THD = 1%
95
dB
Earphone Stage
Output Offset Voltage
VOS
No Load
2.45
2.50
2.55
V
Output Power
PO
THD+N = 1%, RL = 32Ω, f = 1KHz
60
mW
Total Harmonic Distortion Plus Noise
THD+N
RL = 32Ω, PO = 10mW, f = 1kHz
0.02
%
Power Supply Ripple Rejection
PSRR
Input AC-GND, f = 1kHz, VPP = 200mV
80
dB
Channel Separation
CS
VO = 1VRMS, f = 1kHz
-95
dB
Noise
VN
Input
AC-GND
A-Weighting
20
µV
No A-Weighting
35
Signal Noise Ratio
SNR
f = 20 – 20kHz, THD = 1%
95
dB
Control Section
Mute Current
IMUTE
MUTE_D = VDD, MUTE_AB = GND
7
10
mA
Mute Class-D Earphone Current
IMUTE_D
MUTE_D = VDD, MUTE_AB = GND
7
10
mA
Mute Class AB EarphoneCurrent
IMUTE_AB
MUTE_D = VDD, MUTE_AB = GND
9
10
mA
Shutdown Current
ISHDN
VSHDN = 0V
1
µA
Logic Input High
VIH
1.4
V
Logic Input Low
VIL
0.6
Over Temperature Protection
OTP
150
°C
Over Temperature Hysteresis
OTH
40
°C



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