IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY15P15T

IXTA15P15T

IXTP15P15T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Note 1: Pulse test, t

 300s, duty cycle, d  2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

9

15

S

C

iss

3650

pF

C

oss

V

210

pF

C

rss

55

pF

t

d(on)

21

ns

t

r

14

ns

t

d(off)

36

ns

t

f

11

ns

Q

g(on)

48

nC

Q

gs

V

17

nC

Q

gd

12

nC

R

thJC

0.83

C/W

R

thCS

TO-220

0.50

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 15

A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 60

A

V

SD

I

-1.3

V

t

rr

116

ns

Q

RM

638



nC

I

RM

- 11

A

Resistive Switching Times

V

R

I

V