IXYS reserves the right to change limits, test conditions, and dimensions.

FMP76-01T

Ref: IXYS CO 0077 R0

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Characteristic Values

(T

Min.

Typ.

Max.

BV

DSS

V

- 100

V

V

GS(th)

V

- 2.0

- 4.0

V

I

GSS

V

± 100 nA

I

DSS

V

-15

μA

T

- 750

μA

R

DS(on)

V

24 m

Ω

g

fs

V

35

58

S

C

iss

13.7

nF

C

oss

V

890

pF

C

rss

275

pF

t

d(on)

Resistive Switching Times

25

ns

t

r

V

V

40

ns

t

d(off)

R

52

ns

t

f

20

ns

Q

g(on)

197

nC

Q

gs

V

V

65

nC

Q

gd

65

nC

R

thJC

0.95

°C/W

R

thCS

0.15

°C/W

Drain-Source Diode

Characteristic Values

(T

Symbol

Min.

Typ.

Max.

I

S

V

- 54

A

I

SM

Repetitive, pulse width limited by T

JM

- 304

A

V

SD

I

- 1.3

V

t

rr

I

70

ns

Q

RM

V

215

nC

I

RM

- 6

A