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IXRFD631 Scheda tecnica(PDF) 6 Page - IXYS Corporation

Il numero della parte IXRFD631
Spiegazioni elettronici  IXZ318N50 MOSFET and IXRFD631 Gate Driver Module
PDF  7 Pages
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Produttore elettronici  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXRFD631 Scheda tecnica(HTML) 6 Page - IXYS Corporation

  IXRFD631 Datasheet HTML 1Page - IXYS Corporation IXRFD631 Datasheet HTML 2Page - IXYS Corporation IXRFD631 Datasheet HTML 3Page - IXYS Corporation IXRFD631 Datasheet HTML 4Page - IXYS Corporation IXRFD631 Datasheet HTML 5Page - IXYS Corporation IXRFD631 Datasheet HTML 6Page - IXYS Corporation IXRFD631 Datasheet HTML 7Page - IXYS Corporation  
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IXZ631DF18N50
RF Power MOSFET & Driver
Figure 15 Test circuit
*Choke– A common-mode choke is optional and can be used to help stabilize the threshold level
due to ground bounce and to minimize false triggering.
CBULK- Bulk capacitance helps to stabilize both the high voltage VDS for the drain circuit and low
voltage Vcc for the driver circuit. Actual values vary according to load and operating conditions. For
the driver section, tantalum capacitors are recommended for their fast energy delivery.
CBYPASS- Ideally, the benefits realized through bypass capacitance increase as more is used by
way of overlapping impedance curves, lowering the overall broadband impedance to ground. Typi-
cally a range of 0.1 µF, 0.01 µF, 0.001 µF capacitors in sufficient quantities give good results.
Circuit board layout should be carefully considered to optimize operation. Each of the Vcc leads on
the driver section should be treated as its own power supply lead. Bulk and bypass capacitors at-
tached between drain and source leads should be placed symmetrically between the leads. Exces-
sive parasitic inductance can result in V = L di/dt inductive voltage drops, causing unpredictable op-
eration.
MOSFET & Driver
Module
S/DGND
S/DGND



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