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2SC752TM Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SC752TM Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC752(G)TM 2003-03-25 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Computer, Counter Applications · High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · High speed switching time: tstg = 15 ns (typ.) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 200 mA Base current IB 40 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA hFE (1) (Note) VCE = 1 V, IC = 10 mA 40 ¾ 240 DC current gain hFE (2) VCE = 1 V, IC = 100 mA 20 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 1 mA ¾ ¾ 0.3 V Base-emitter saturation voltage VBE (sat) IC = 20 mA, IB = 1 mA ¾ ¾ 1.0 V Transition frequency fT VCE = 10 V, IC = 10 mA 200 400 ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 4 6 pF Turn-on time ton ¾ 70 100 Storage time tstg ¾ 15 30 Switching time Fall time tf Duty cycle < = 2％ ¾ 30 70 ns Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
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