Max.

N-Channel

P-Channel

Drain-to-Source Voltage

12

-12

6.3

-3.0

5.2

-2.5

Pulsed Drain Current



26

-13

Power Dissipation

ƒ

2.0

W

Power Dissipation

ƒ

1.3

Linear Derating Factor

16

mW/°C

Gate-to-Source Voltage

±12

„

± 8.0

V

Junction and Storage Temperature Range

°C

N-Ch

P-Ch

12V

-12V

6/2/03

IRF7338

Description

www.irf.com

1

These N and P channel MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

the extremely low on-resistance per silicon area. This

benefit provides the designer with an extremely efficient

device for use in battery and load management

applications.

This Dual SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering technique

s.

Parameter

Units

A

Absolute Maximum Ratings

-55 to + 150

SO-8

D1

N-CHANNEL MOSFET

P-CHANNEL MOSFET

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Drain Lead

–––

20

Junction-to-Ambient

ƒ

–––

62.5

°C/W

Thermal Resistance

PD - 94372C