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PDTC115EEF Scheda tecnica(PDF) 9 Page - NXP Semiconductors |
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PDTC115EEF Scheda tecnica(HTML) 9 Page - NXP Semiconductors |
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9 / 14 page ![]() 2004 Jul 30 9 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 100 k Ω, R2 = 100 kΩ PDTA115E series UNIT A1 max. A(1) bb1 e1 eL L1 REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.50 0.46 0.20 0.12 0.55 0.47 0.03 0.62 0.55 0.35 0.65 DIMENSIONS (mm are the original dimensions) Note 1. Including plating thickness 0.30 0.22 0.30 0.22 SOT883 SC-101 03-02-05 03-04-03 DE 1.02 0.95 L E 2 3 1 b b1 A1 A D L1 0 0.5 1 mm scale Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 e e1 |
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