SSD20N06 datasheet(1/4 Pages) SECOS

Il numero della parte	SSD20N06

Spiegazioni elettronici	N-Ch Enhancement Mode Power MOSFET

PDF	4 Pages

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Produttore elettronici	SECOS [SeCoS Halbleitertechnologie GmbH]

Homepage	http://www.secosgmbh.com

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1 / 4 page

Elektronische Bauelemente

SSD20 06

20A , 60V , RDS(O ) 40m

-Ch Enhancement Mode Power MOSFET

19-Jul-2017 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

C

D

N

O

P

G E

F

H

K

J

M

B

TO-252(D-Pack)

20N06

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD20N06 is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent RDS(on) and gate charge for most of the synchronous

buck converter applications.

The SSD20N06 meet the RoHS and Green Product

requirement with full function reliability approved.

FEATURES

Advanced high cell density Trench technology

Super Low Gate Charge

Green Device Available

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

TO-252

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

TC=25°C

20

A

TC=100°C

13

A

TA=25°C

5

A

Continuous Drain Current @VGS=10V

1

TA=70°C

ID

4

A

Pulsed Drain Current

3

IDM

40

A

TC=25°C

31.3

Total Power Dissipation

TA=25°C

PD

2

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

1

62.5

Maximum Thermal Resistance Junction-Ambient

2

RθJA

110

Maximum Thermal Resistance Junction-Case

1

RθJC

4

°C / W

1

Gate

3

Source

2

Drain

Date Code

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.35

6.9

J

2.3 REF.

B

4.95

5.53

K

0.89 REF.

C

2.1

2.5

M

0.45

1.14

D

0.41

0.9

N

1.55 Typ.

E

6

7.5

O

0

0.13

F

2.90 REF

P

0.58 REF.

G

5.4

6.4

H

0.6

1.2

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