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© 2004 IXYS All rights reserved

Symbols and Definitions

C

ies

Input capacitance of IGBT

C

iss

Input capacitance of MOSFET

-di/dt

Rate of decrease of forward current

I

C

DC collector current

I

D

Drain current

I

F

Forward current of diode

I

F(AV)M

Maximum average forward current at specified T

h

I

FSM

Peak one cycle surge forward current

I

GT

Gate trigger current

I

R

Reverse current

I

RM

Maximum peak recovery current

I

T

Forward current of thyristor

I

T(AV)M

Maximum average on-state current of a thyristor

at specified T

h

I

TSM

Maximum surge current of a thyristor

R

DS(on)

Static drain-source on-state resistance

R

thjc

Thermal resistance junction to case

r

T

Slope resistance of a thyristor or diode

(for power loss calculations)

T

case

Case temperature

T

h

Heatsink temperature

t

fi

Current fall time with inductive load

T

T

(vj)

Junction temperature

T

T

(vj)m

Maximum junction temperature

t

rr

Reverse recovery time of a diode

V

CE(sat)

Collector-emitter saturation voltage

V

CES

Maximum collector-emitter voltage

V

DRM

Maximum repetitive forward blocking

voltage of thyristor

V

DSS

Drain-source break-down voltage

V

F

Forward voltage of diode

V

R

Reverse voltage

V

RRM

Maximum peak reverse voltage of thyristor or

diode

V

T

On-state voltage of thyristor

V

T0

Threshold voltage of thyristors or diodes (for

power loss calculation only)

Chip and DCB Ceramic Substrates Data book

Edition 2004

Published by IXYS Semiconductor GmbH

Marketing Communications

Edisonstraße 15, D-68623 Lampertheim

© IXYS Semiconductor GmbH

All Rights reserved

As far as patents or other rights of third parties are concerned, liability is only

assumed for chips and DCB parts per se, not for applications, processes and

circuits implemented with components or assemblies. Terms of delivery and the

right to change design or specifications are reserved.

Nomenclature

IGBT and MOSFET Discrete

IXSD 40N60A

(Example)

IX

IXYS

Die technology

E

F

HiPerFETTM Power MOSFET

G

Fast IGBT

S

IGBT with SCSOA capability

T

Standard Power MOSFET

D

Unassembled chip (die)

40

Current rating, 40 = 40 A

N

N-channel type

P

P-channel type

60

Voltage class, 60 = 600 V

xx

MOSFET

A

Prime RDS(on) for standard MOSFET

Q

Low gate charge die

Q2

Low gate charge die, 2nd generation

P

PolarHTTM Power MOSFET

L

Linear Mode MOSFET

IGBT

--

No letter, low VCE(sat)

A

Or A2, std speed type

B

Or B2, high speed type

C

Or C2, very high speed type

W-CWP 55-12/18

(Thyristor Example)

W

Package type

C

Chip function

C = Silicon phase control thyristor

W

Unassembled chip

P

Process designator

P = Planar passivated chip

cathode on top

55

Current rating value of one chip in A

12/18

Voltage class, 12/18 = 1200 up to 1800 V

Diode and Thyristor Chips

C-DWEP 69-12

(Diode Example)

C

Package type

D

Chip function

D = Silicon rectifier diode

W

Unassembled chip

EP

Process designator

EP = Epitaxial rectifier diode

N

= Rectifier diode, cathode on top

P

= Rectifier diode, anode on top

FN = Fast Rectifier diode, cathode on top

FP = Fast Rectifier diode, anode on top

69

Current rating value of one chip in A

-12

Voltage class, 12 = 1200 V

Registration No.:

001947 TS2/765/17557

Registration No.:

001947

Chip-Shortform2004.pmd

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