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2SA2124 Scheda tecnica(PDF) 2 Page - Sanyo Semicon Device |
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2SA2124 Scheda tecnica(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SA2124 No.7920-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10µA, IE=0 --30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --30 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0 --6 V Output Capacitance Cob VCB=--10V, f=1MHz 17 pF Turn-On Time ton See specified Test Circuit. 45 ns Storage Time tstg See specified Test Circuit. 200 ns Fall Time tf See specified Test Circuit. 23 ns Package Dimensions Switching Time Test Circuit unit : mm 2038B 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 1.5 0.5 0.4 3.0 0.75 4.5 1.6 0.4 12 3 1.5 VR RB VCC= --12V VBE=5V + + 50 Ω INPUT OUTPUT RL 220 µF 470 µF PW=20 µs IB1 D.C. ≤1% IC IB2 IC= --20IB1=20IB2= --0.5A --2.0 --1.8 --1.6 --1.2 --1.4 --0.8 --1.0 --0.4 --0.6 --0.2 0 --0.4 0 --0.8 --1.2 --1.6 --2.0 --0.2 --0.6 --1.0 --1.4 --1.8 IC -- VCE IT07248 --10mA --15mA --20mA --25mA --40mA IB=0 --5mA --2mA VCE= --2V --2.0 --1.0 --0.5 --1.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 IC -- VBE IT07249 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V |
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