FFB20UP30DN datasheet(1/3 Pages) THINKISEMI

Il numero della parte	FFB20UP30DN

Spiegazioni elettronici	20Ampere,300Volt Surface Mount Dual Common Cathode Ultra Fast Recovery Epitaxial Diode

PDF	3 Pages

Scroll/Zoom	100%

Produttore elettronici	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Homepage	http://www.thinkisemi.com

Logo

1 / 3 page

Positive

Negative

Common Cathode

Common Anode

Doubler

Tandem Polarity

Series

Tandem Polarity

Suffix "DP"

Suffix "DD"

Suffix "DS"

Suffix "DN"

Unit : inch (mm)

D2PAK/TO-263

Case

Pb Free Plating Product

FFB20UP30DN

20Ampere,300Volt Surface Mount Dual Common Cathode Ultra Fast Recovery Epitaxial Diode

Pb

·

Ultrafast Recovery Time

·

Soft Recovery Characteristics

·

Low Recovery Loss

·

Low Forward Voltage

·

High Surge Current Capability

·

Low Leakage Current

APPLICATION

GENERAL DESCRIPTION

· Freewheeling, Snubber, Clamp

· Inversion Welder

· PFC

· Plating Power Supply

· Ultrasonic Cleaner and Welder

· Converter & Chopper

· UPS

PRODUCT FEATURE

FFB20UP30DN using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.

FFB20UP30DN

http://www.thinkisemi.com.tw/

Page 1/3

Rev.09T

Absolute Maximum Ratings T

C = 25°C unless otherwise noted

Thermal Characteristics

Symbol

Parameter

Value

Units

VRRM

Peak Repetitive Reverse Voltage

300

V

VRWM

Working Peak Reverse Voltage

300

V

VR

DC Blocking Voltage

300

V

IF(AV)

Average Rectified Forward Current

Rating for each diode IF(AV)/2 @ TC = 130°C

20

A

IFSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

180

A

TJ, TSTG

Operating Junction and Storage Temperature

- 65 to +150

°C

Symbol

Parameter

Max

Units

RθJC

Maximum Thermal Resistance, Junction to Case

2.0

°C/W

Electrical Characteristics (per diode) T

C = 25°C unless otherwise noted

* Pulse Test: Pulse Width=300

µs, Duty Cycle=2%

Symbol

Parameter

Min.

Typ.

Max.

Units

VFM *

IF = 10A

TC = 25 °C

TC = 150 °C

-

1.3

1.2

V

IRM *

VR = 300V

TC = 25 °C

TC = 150 °C

-

1

500

µA

trr

IF =0.5A, Irr=1A, VCC = 30V

IF =1A, di/dt = 100A/µs, VCC = 30V

IF =10A, di/dt = 200A/µs, VCC = 195V

TC = 25 °C

-

30

35

45

ns

ta

tb

Qrr

IF =10A, di/dt = 200A/µs, VCC = 195V

TC = 25 °C

-

11

13

20

-

ns

nC

WAVL

Avalanche Energy (L = 20mH)

20

-

mJ

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