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DFA100BA80 Scheda tecnica(PDF) 2 Page - SanRex Corporation |
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DFA100BA80 Scheda tecnica(HTML) 2 Page - SanRex Corporation |
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2 / 3 page ![]() SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com DFA100BA80/160 ■Maximum Ratings (Tj=25℃ unless otherwise specified) Symbol Item Ratings DFA100BA80 800 960 DFA100BA160 1600 1700 Unit VRRM VRSM Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage V V 800 1600 VDRM Repetitive Peak off-State Voltage V Symbol Item Conditions Ratings 100 Unit IT(AV) Average On-State Current Singl phase half wave. 180 °conduction, Tc=92℃ ITSM Surge On-State Current I2t I2t 1cycle, 50/60HZ, peak value, non-repetitive A 1186/1300 A 7030 A2S di /dt Critical Rate of Rise of On-State Current IG =100mA, VD =1/2VDRM, diG/dt =0.1A/μs Tj Operating Junction Temperature Tstg Storage Temperature Mounting Torque Mounting (M5) Terminals (M5) Mass Recommended Value 1.5-2.5 (15-25) Recommended Value 1.5-2.5 (15-25) Typical Value 150 A/ μs −40 to +135 ℃ VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V −40 to +125 2.7 (28) 2.7 (28) 150 ℃ N ・m (㎏f・B) g Symbol Item Conditions Ratings 70 Unit IDRM Repetitive Peak Off-State Current,max. IRRM Repetitive Peak Reverse Current,max. Tj =135℃,VD=VDRM Tj =135℃,VD=VRRM VTM Peak On-State Voltage,max. IGT Gate Trigger Current,max. dv /dt Critical Rate of Rise of Off- State Voltage,min. Tj =25℃,ITM=100A,Inst. measurement VD =6V,IT=1A mA 70 mA 1.20 V 70 mA VGT Gate Trigger Voltage,max. VD =6V,IT=1A 3 V Tj =125℃,VD=2/3VDRM Rth (j-c) Thermal Impedance, max. Junction to Case 500 V/ μs 0.36 ℃/W Case to Fin 0.10 ℃/W ■Electrical Characteristics ●THYRISTOR Rth (c-f) Thermal Impedance, max. DIODE Maximum Forward Characteristics Forward Voltage Drop VF(V) 0. 5 1. 0 1. 5 2. 5 2. 0 1000 100 20 10 200 500 50 T j=25℃ Max. Output Current ID(A) 50 300 250 200 150 100 0 0 40 80 20 120 100 60 DIODE Output Current vs. Power Dissipation Three Phase |
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