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P0260ETFS Scheda tecnica(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Il numero della parte P0260ETFS
Spiegazioni elettronici  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Produttore elettronici  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Homepage  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P0260ETFS Scheda tecnica(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

  P0260ETFS Datasheet HTML 1Page - NIKO SEMICONDUCTOR CO., LTD. P0260ETFS Datasheet HTML 2Page - NIKO SEMICONDUCTOR CO., LTD. P0260ETFS Datasheet HTML 3Page - NIKO SEMICONDUCTOR CO., LTD. P0260ETFS Datasheet HTML 4Page - NIKO SEMICONDUCTOR CO., LTD.  
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REV 1.0
2
E-44-1
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
P0260ETF:TO-220F
P0260ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 1A
3.4
4.3
Ω
Forward Transconductance
1
gfs
VDS = 15V, ID = 2A
4
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
322
pF
Output Capacitance
Coss
41
Reverse Transfer Capacitance
Crss
9
Total Gate Charge
2
Qg
VDD = 480V, ID = 2A, VGS = 10V
10.7
nC
Gate-Source Charge
2
Qgs
1.4
Gate-Drain Charge
2
Qgd
4.8
Turn-On Delay Time
2
td(on)
VGS = 10V , VDD = 300V,
ID = 2A, RG= 25Ω
30
nS
Rise Time
2
tr
61
Turn-Off Delay Time
2
td(off)
59
Fall Time
2
tf
67
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
2
A
Forward Voltage
1
VSD
IF = 2A, VGS = 0V
1.5
V
Reverse Recovery Time
trr
IF = 2A, dlF/dt = 100A / S
295
nS
Reverse Recovery Charge
Qrr
1.2
uC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.



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