P0908ATF datasheet(2/4 Pages) NIKOSEM

Il numero della parte	P0908ATF

Spiegazioni elettronici	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Produttore elettronici	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Homepage	http://www.niko-sem.com

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2 / 4 page

REV1.1

F-51-1

P0908ATF

TO-220F

Halogen-Free & Lead-Free

NIKO-SEM

N-Channel Enhancement Mode

Field Effect Transistor

Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 20A

mΩ

VGS = 7V, ID = 15A

8.1

Forward Transconductance

gfs

VDS = 10V, ID = 20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

2853

Output Capacitance

Coss

355

Reverse Transfer Capacitance

Crss

199

Gate Resistance

VGS = 0V, VDS = 0V ,f = 1MHz

0.9

Total Gate Charge

Qg(VGS=10V)

VDS = 40V, VGS = 10V,

ID = 20A

Qg(VGS=7V)

41.5

Gate-Source Charge

Qgs

15.3

Gate-Drain Charge

Qgd

19.4

Turn-On Delay Time

td(on)

VDD = 40V

ID  20A, VGS = 10V, RGEN = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 20A,VGS = 0V

1.4

Reverse Recovery Time

trr

IF = 20A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.

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