ISCPD44D datasheet(1/2 Pages) ISC

Il numero della parte	ISCPD44D

Spiegazioni elettronici	isc Silicon PNP Darlington Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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isc Silicon PNP Darlington Power Transistor

ISCPD44D

DESCRIPTION

·

High DC Current Gain-

: hFE = 1000(Min)@ IC= -4A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -4A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

-12

A

IB

Base Current- Continuous

-0.3

A

PC

Collector Power Dissipation

@TC=25℃

30

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.5

℃

/W

Rth j-a

Thermal Resistance,Junction to Ambient

63.5

℃

/W

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