STP8NM60FP datasheet(2/16 Pages) STMICROELECTRONICS

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STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1) ISD ≤ 5A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

Table 4: Thermal Data

Table 5: Avalanche Characteristics

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

Symbol

Parameter

Value

Unit

TO-220/D²PAK

TO-220FP

DPAK/IPAK

VGS

Gate- source Voltage

± 30

Drain Current (continuous) at TC = 25°C

88 (*)

Drain Current (continuous) at TC = 100°C

5 (*)

3.1

IDM ( )

Drain Current (pulsed)

32 (*)

PTOT

Total Dissipation at TC = 25°C

100

Derating Factor

0.8

0.24

0.4

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

VISO

Insulation Withstand Voltage (DC)

2500

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220/D²PAK

TO-220FP

DPAK/IPAK

Rthj-case

Thermal Resistance Junction-case Max

1.25

4.16

1.3

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

2.5

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

200

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

600

IDSS

Zero Gate Voltage

Drain Current

(VGS = 0)

VDS = Max Rating

VDS = Max Rating,

TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 30V

±100

VGS(th)

Gate Threshold

Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source

On Resistance

VGS = 10V, ID = 2.5 A

0.9

Ω

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