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SM1691OSCS Scheda tecnica(PDF) 3 Page - Sinopower Semiconductor Inc

Il numero della parte SM1691OSCS
Spiegazioni elettronici  Single N-Channel Enhancement Mode MOSFET with Schottky Diode
PDF  12 Pages
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Produttore elettronici  SINOPWER [Sinopower Semiconductor Inc]
Homepage  http://www.sinopowersemi.com/Form2/index.aspx
Logo SINOPWER - Sinopower Semiconductor Inc

SM1691OSCS Scheda tecnica(HTML) 3 Page - Sinopower Semiconductor Inc

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SM1691OSCS
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2018
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250mA
60
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
-
-
1
mA
TJ=85°C
-
-
30
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250mA
1
2
2.5
V
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
-
-
±10
mA
RDS(ON)
d
Drain-Source On-state Resistance
VGS=10V, IDS=100mA
-
1.8
2.2
W
VGS=4.5V, IDS=50mA
-
2
2.6
W
Diode Characteristics
VSD
c
Diode Forward Voltage
ISD=100mA, VGS=0V
-
0.8
1.3
V
trr
Reverse Recovery Time
ISD=1A, dlSD/dt=100A/ms
-
13
-
ns
Qrr
Reverse Recovery Charge
-
8
-
nC
Dynamic Characteristics
c
Ciss
Input Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz
-
24
32
pF
Coss
Output Capacitance
-
5.5
-
Crss
Reverse Transfer Capacitance
-
2.5
-
td(ON)
Turn-on Delay Time
VDD=30V, RL=300W,
IDS=0.1A, VGEN=10V,
RG=6W
-
3
6
ns
tr
Turn-on Rise Time
-
7
13
td(OFF)
Turn-off Delay Time
-
10
18
tf
Turn-off Fall Time
-
12
22
Gate Charge Characteristics
d
Qg
Total Gate Charge
VDS=30V, VGS=10V,
IDS=1A
-
1.6
2.3
nC
Qgs
Gate-Source Charge
-
0.6
-
Qgd
Gate-Drain Charge
-
0.1
-
Electrical Characteristics (T
A = 25°C unless otherwise noted)
·
Channel 1



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