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SIP41110DB Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte SIP41110DB
Spiegazioni elettronici  Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
PDF  7 Pages
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIP41110DB Scheda tecnica(HTML) 2 Page - Vishay Siliconix

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SiP41109/41110
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73023
S-51104—Rev. A, 13-Jun-05
ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V)
V CC, PVCC
−0.3 to 15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOT, PHASE
−0.3 to 55 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOT to PHASE
−0.3 to 15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
−40 to 150_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
125_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa
SO-8
770 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Impedance (QJA)b
SO-8
130_C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Device mounted with all leads soldered or welded to PC board.
b.
Derate 7.7 mW/_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V)
VCC
10.8 to 13.2 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VLX
.48 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBOOT
.100 nF to 1 mF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOT to PHASE
. 8 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range
−40 to 85_C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONSa
Test Conditions Unless Specified
Limits
Parameter
Symbol
VCC = 12 V, VBOOT − VPHASE = 8 V
TA = −40 to 85_C
Mina
Typb
Maxa
Unit
Power Supplies
Supply Voltage
VCC
10.8
13.2
V
Quiescent Current
ICCQ
PWM Non-Switching
5.6
9.5
Supply Current
IDD
fPWM = 100 kHz CLOAD = 3 nF
SiP41109
12.5
mA
Supply Current
IDD
fPWM = 100 kHz, CLOAD = 3 nF
SiP41110
11.0
mA
Tristate (Shutdown) Current
ICCT
PWM = Open
850
1200
mA
Reference Voltage
Break-Before-Make
VBBM
2.5
V
PWM Input
Input High
VIH
4.0
VCC
V
Input Low
VIL
1.0
V
Bias Current
IB
PWM 5 V or 0 V
"600
"1000
mA
Tristate Threshold
High
VTSH
3.0
V
Tristate Threshold
Low
VTSL
2.0
V
Tristate Holdoff Timeoutc
tTST
240
ns
Bootstrap Diode
Forward Voltage
VF
IF = 40 mA, TA = 25_C
0.70
0.85
1.0
V
MOSFET Drivers
High-Side Drive Currentc
IPKH(source)
VBOOT − VPHASE = 8 V
0.8
High-Side Drive Currentc
IPKH(sink)
VBOOT − VPHASE = 8 V
1.0
IPKL(source)
VPVCC = 8 V
SiP41110
0.9
A
Low Side Drive Currentc
IPKL(sink)
VPVCC = 8 V
SiP41110
1.2
A
Low-Side Drive Currentc
IPKL(source)
VPVCC = 12 V
SiP41109
1.4
IPKL(sink)
VPVCC = 12 V
SiP41109
1.8



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