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FEP6DT Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FEP6DT Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Fast Rectifier FEP6DT FEATURES · With TO-220 packaging · High junction temperature capability · Low forward voltage · High current capability · Low power loss, high efficiency · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Free-Wheeling diodes · Reverse battery protection ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current @Tc=100℃ 6 A IFSM Nonrepetitive Peak Surge Current (8.3ms single half sine-wave superimposed on rated load conditions) 100 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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