SLF840C datasheet(2/7 Pages) MAPLESMI

2 / 7 page

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 00 January. 2015

Electrical Characteristics

C = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 uA

500

△BVDSS

/ △TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 uA, Referenced to 25℃

0.5

V/℃

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125℃

IGSSF

Gate-Body Leakage Current, Forward

VGS = 25 V, VDS = 0 V

100

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -25 V, VDS = 0 V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 uA

2.0

4.0

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 4 A

0.64

0.77

gFS

Forward Transconductance

VDS = 40 V, ID = 4 A

(Note 4)

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

1271

Coss

Output Capacitance

143

Crss

Reverse Transfer Capacitance

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 250 V, ID = 8 A,

RG = 25 Ω

(Note 4, 5)

27.5

Turn-On Rise Time

td(off)

Turn-Off Delay Time

127.5

Turn-Off Fall Time

35.5

Total Gate Charge

VDS = 400 V, ID = 8 A,

VGS = 10 V

(Note 4, 5)

31.5

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

6.5

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 8 A

1.4

trr

Reverse Recovery Time

VGS = 0 V, IS = 8 A,

567.5

Qrr

Reverse Recovery Charge

dIF / dt = 100 A/us

(Note 4)

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 8.3mH, I

AS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. I

SD £ 8A, di/dt £ 100A/us, VDD £ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width £ 300us, Duty cycle £ 2%

5. Essentially independent of operating temperature

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