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SLP840UZ Scheda tecnica(PDF) 4 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLP840UZ Scheda tecnica(HTML) 4 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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4 / 7 page ![]() Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 October. 2014 Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for SLP840UZ Figure 9-2. Maximum Safe Operating Area for SLF840UZ Figure 10. Maximum Drain Current vs Case Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 4.5 A T J, Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms DC 10 ms 1 ms 100 ms Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 10 T C, Case Temperature [ ℃] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms DC 10 ms 1 ms 100 ms Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] |
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