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ISCP57E Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte ISCP57E
Spiegazioni elettronici  isc Silicon PNP Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCP57E Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
ISCP57E
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -350V(Min)
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ IC= -50mA, IB= -5mA
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Use in the audio power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-350
V
VEBO
Emitter-Base voltage
-6
V
IC
Collector Current-Continuous
-0.3
A
PC
Collector Power Dissipation
@ Ta=25℃
0.625
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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