| Motore di ricerca datesheet componenti elettronici |
|
MJB3055 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
MJB3055 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor MJB3055 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 8.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.7 mA ICBO Collector Cutoff Current VCB= 70V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 4A ; VCE= 4V 20 100 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 5 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f= 500kHz 2.0 MHz |
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |