MJB13007 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

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isc Silicon NPN Power Transistor

MJB13007

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0

400

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 2A ;IB= 0.4A

1.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 5A ;IB= 1A

TC= 100℃

2.0

3.0

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 8A ;IB= 2A

3.0

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 2A ;IB= 0.4A

1.2

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 5A ;IB= 1A

TC= 100℃

1.6

1.5

ICES

Collector Cutoff Current

VCES= 700V; VBE(off)= 1.5V

TC= 125℃

0.1

1.0

IEBO

Emitter Cutoff Current

VEB= 9V; IC= 0

0.1

hFE-1

DC Current Gain

IC= 2A; VCE= 5V

hFE-2

DC Current Gain

IC= 5A; VCE= 5V

Current-Gain—Bandwidth Product

IC= 0.5 A; VCE= 10V;

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest = 0.1MHz

Switching Times; Resistive Load

Storage Time

IC= 5A; VCC= 125V;

IB1= IB2= 1A; tp= 25μs;

Duty Cycle≤ 1%

0.1

Fall Time

1.5

Storage Time

3.0

Fall Time

0.7

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