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3
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PA241
CAUTION
The PA241 is constructed from MOSFET transistors. ESD handling procedures must be observed.
ABSOLUTE MAXIMUM RATINGS
PA241DW
PA241DWA
SUPPLY VOLTAGE, +V
S to –VS
350V
OUTPUT CURRENT, continuous within SOA
60 mA
OUTPUT CURRENT, peak
120 mA
POWER DISSIPATION, continuous @ T
C = 25°C
9W
INPUT VOLTAGE, differential
±16 V
INPUT VOLTAGE, common mode
±V
S
TEMPERATURE, pin solder – 10 sec
220°C
TEMPERATURE, junction2
150°C
TEMPERATURE, storage
–65 to +150°C
TEMPERATURE RANGE, powered (case)
–40 to +125°C
PA241DW
PA241DWA
PARAMETER
TEST CONDITIONS1
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
25
40
15
30
mV
OFFSET VOLTAGE, vs. temperature3
Full temperature range
100
500
*
*
µV/°C
OFFSET VOLTAGE, vs supply
3
*
µV/V
OFFSET VOLTAGE, vs time
70
130
*
µV/kh
BIAS CURRENT, initial
100
2000
*
*
pA
BIAS CURRENT, vs supply
15
50
*
*
pA/V
OFFSET CURRENT, initial
100
400
*
*
pA
INPUT IMPEDANCE, DC
1011
*
INPUT CAPACITANCE
6
*
pF
COMMON MODE, voltage range
+V
S–14
*
V
COMMON MODE, voltage range
-V
S+12
*
V
COMMON MODE REJECTION, DC
V
CM = ±90V DC
84
94
*
*
dB
NOISE, broad band
10kHz BW, R
S = 1K
50
*
µV RMS
NOISE, low frequency
1-10 Hz
125
*
µV p-p
GAIN
OPEN LOOP at 15Hz
R
L = 5K
90
96
*
*
dB
BANDWIDTH, gain bandwidth product
3
*
MHz
POWER BANDWIDTH
280V p-p
30
*
kHz
OUTPUT
VOLTAGE SWING
I
O = 40mA
±V
S–12
±V
S–10
±V
S–10
±V
S–8.5
V
CURRENT, peak4
120
*
mA
CURRENT, continuous
60
*
mA
SETTLING TIME to .1%
10V step, A
V = –10
2
*
µs
SLEW RATE
C
C = 3.3pF
30
*
V/µs
RESISTANCE5, 1mA
R
CL = 0
150
*
Ω
RESISTANCE5, 40 mA
R
CL = 0
5
*
Ω
POWER SUPPLY
VOLTAGE
±50
±150
±175
*
*
*
V
CURRENT, quiescent
2.2
2.5
*
2.3
mA
THERMAL
PA241DW RESISTANCE, AC junction to case F > 60Hz
7
10
*
*
°C/W
PA241DW RESISTANCE, DC junction to case F < 60Hz
12
14
*
*
°C/W
PA241DW RESISTANCE, junction to air
Full temperature range
55
*
°C/W
TEMPERATURE RANGE, case
Meets full range spec's
–25
+85
*
*
°C
SPECIFICATIONS
NOTES: *
"A" specification is the same as the non "A" specification.
1.
Unless otherwise noted T
C = 25°C, CC = 6.8pF. DC input specifications are ± value given. Power supply voltage is typical
rating.
2.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF. For guidance, refer to heatsink data sheet.
3.
Sample tested by wafer to 95%.
4.
Guaranteed but not tested.
5.
The selected value of R
CL must be added to the values given for total output resistance.
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