WNM2016 datasheet(2/4 Pages) KEXIN

2 / 4 page

Transistors

www.kexin.com.cn

MOSFET

SMD Type

N-Channel MOSFET

WNM2016

■

Electrical Characteristics TA = 25℃ unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250 μA, VGS=0V

VDS=16V, VGS=0V

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±8V

±100

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250 μA

0.4

VGS=4.5V, ID=3.6 A

VGS=2.5V, ID=3.1 A

VGS=1.8V, ID=1 A

Forward Transconductance

gFS

VDS=5 V, ID=3.1 A

8.5

Input Capacitance

Ciss

500

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg(tot)

8.5

Threshold Gate Charge

Qg(th)

0.45

Gate Source Charge

Qgs

0.65

Gate Drain Charge

Qgd

3.1

Turn-On DelayTime

td(on)

Turn-On Rise Time

20.8

Turn-Off DelayTime

td(off)

38.8

Turn-Off Fall Time

10.8

Diode Forward Voltage

VSD

IS=1 A,VGS=0V

1.5

Zero Gate Voltage Drain Current

IDSS

μA

mΩ

VGS=4.5 V, VDS=10 V,

RL=3.5Ω, ,RG=6Ω

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=10 V, f=1MHz

VGS=4.5 V, VDS=10 V, ID=3.1 A

■

Marking

WT6*

WT6 = Device Code

* = Month (A~Z)

WNM2016 Scheda tecnica(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

WNM2016 Scheda tecnica(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2 3 4

Scheda tecnica Scarica

Link URL