IXTQ110N10P datasheet(2/5 Pages) IXYS

2 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 110N10P

IXTT 110N10P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,381,025

6,162,665

6,306,728 B1 6,534,343

6,683,344

one or moreof the following U.S. patents:

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,486,715

6,259,123B1 6,404,065B1 6,583,505

6,710,405B2

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

DS= 10 V; ID = 0.5 ID25, pulse test

iss

3550

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

1370

rss

440

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = 60 A

d(off)

G = 4 Ω (External)

g(on)

110

GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

thJC

0.31 K/W

thCK

(TO-3P)

0.21

K/W

Source-Drain Diode

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

Min.

typ.

Max.

GS = 0 V

110

Repetitive

250

F = IS, VGS = 0 V,

1.5

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

F = 25 A

130

-di/dt = 100 A/

µs

R = 50 V

2.0

µC

TO-268 Outline

TO-3P (IXTQ) Outline

IXTQ110N10P Scheda tecnica(PDF) 2 Page - IXYS Corporation

IXTQ110N10P Scheda tecnica(HTML) 2 Page - IXYS Corporation

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL