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NT5CB64M16GP-EKB Scheda tecnica(PDF) 22 Page - Nanya Technology Corporation.

Il numero della parte NT5CB64M16GP-EKB
Spiegazioni elettronici  Commercial, Industrial and AutomotiveDDR3(L) 1 Gb SDRAM
PDF  160 Pages
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Produttore elettronici  NANYA [Nanya Technology Corporation.]
Homepage  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

NT5CB64M16GP-EKB Scheda tecnica(HTML) 22 Page - Nanya Technology Corporation.

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Version 2.2
22
Nanya Technology Cooperation ©
04/2019
All Rights Reserved.
NTC Proprietary
Level: Property
DDR3(L) 1Gb SDRAM
NT5CB(C)128M8GN / NT5CB(C)64M16GP
Additive Latency (AL)
Additive Latency (AL) operation is supported to make command and data bus efficient for sustainable bandwidth in DDR3(L)
SDRAM. In this operation, the DDR3(L) SDRAM allows a read or write command (either with or without auto-precharge) to
be issued immediately after the active command. The command is held for the time of the Additive Latency (AL) before it is
issued inside the device. The Read Latency (RL) is controlled by the sum of the AL and CAS Latency (CL) register settings.
Write Latency (WL) is controlled by the sum of the AL and CAS Write Latency (CWL) register settings. A summary of the AL
register options are shown as the following table.
Additive Latency (AL) Settings
A4
A3
AL
0
0
0, (AL Disable)
0
1
CL-1
1
0
CL-2
1
1
Reserved



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