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GD25D05C Scheda tecnica(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25D05C Scheda tecnica(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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4 / 42 page ![]() 3.3V Uniform Sector Standard and Dual Serial Flash GD25D10C/05C 4 1. FEATURES ◆ 1M/512K-bit Serial Flash ◆ Fast Program/Erase Speed -128K/64K-byte -Page Program time: 0.7ms typical -256 bytes per programmable page -Sector Erase time: 100ms typical -Block Erase time: 0.3/0.5s typical ◆ Standard SPI, Dual Output -Chip Erase time: 1/0.5s typical -Standard SPI: SCLK, CS#, SI, SO, WP# -Dual Output: SCLK, CS#, IO0, O1, WP# ◆ Flexible Architecture -Uniform Sector of 4K-byte ◆ Clock Frequency -Uniform Block of 32/64K-byte -100MHz for fast read with 30PF load -Dual Output Data transfer up to 160Mbits/s ◆ Low Power Consumption -0.1uA typical standby current ◆ Software/Hardware Write Protection -0.1uA typical power down current -Write protect all/portion of memory via software -Enable/Disable protection with WP# Pin ◆ Advanced Security Features -128-bit Unique ID ◆ Minimum 100,000 Program/Erase Cycles ◆ Single Power Supply Voltage ◆ Data retention -Full voltage range: 2.7~3.6V -20-year data retention typical ◆ Package option -SOP8 150mil -SOP8 208mil -TSSOP8 173mil -DIP8 300mil -USON8 3*2mm -USON8 1.5*1.5mm |
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