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MP6404 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte MP6404
Spiegazioni elettronici  TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
PDF  11 Pages
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP6404 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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MP6404
2004-07-01
3
Electrical Characteristics (Ta = 25°C) (Nch MOS FET)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
―
±10
µA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
―
―
100
µA
Drain source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
―
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
VGS = 4 V, ID = 2.5 A
―
0.21
0.32
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
―
0.12
0.16
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
3.0
5.0
―
S
Input capacitance
Ciss
―
370
―
pF
Reverse transfer capacitance
Crss
―
60
―
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
180
―
pF
Rise time
tr
―
18
―
Turn-on time
ton
―
25
―
Fall time
tf
―
55
―
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 µs
―
170
―
ns
Total gate charge
(gate-source plus gate-drain)
Qg
―
12
―
nC
Gate-source charge
Qgs
―
8
―
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
―
4
―
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
―
―
―
5
A
Pulse drain reverse current
IDRP
―
―
―
20
A
Diode forward voltage
VDSF
IDR = 5 A, VGS = 0 V
―
―
−1.7
V
Reverse recovery time
trr
―
70
―
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR/dt = 50 A/µs
―
0.1
―
µC
10 V
VGS
VDD ≈ 30 V
ID = 2.5 A
VOUT
0 V



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