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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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GD25R256D Scheda tecnica(PDF) 65 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25R256D Scheda tecnica(HTML) 65 Page - GigaDevice Semiconductor (Beijing) Inc. |
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65 / 82 page  3.3V Uniform Sector Dual and Quad Serial Flash GD25R256D 65 Description Comment Add(H) (Byte) DW Add (Bit) Data Data Multiplier from typical erase time to maximum erase time 54H 3:0 0010b 42H Erase Type 1 Erase, Typical time Erase time=70ms/80ms 7:4 0100b 55H 10:8 010b 62H Erase Type 2 Erase, Typical time Erase time=200ms/208ms 15:11 01100b 56H 17:16 01b C9H Erase Type 3 Erase, Typical time Erase time=300ms/304ms 23:18 110010b 57H 24 0b FEH Erase Type 4 Erase, Typical time Not exist 31:25 1111111b Multiplier from typical time to max time for Page or Byte program 58H 3:0 0010b 82H Page Size Page size=256Byte 7:4 1000b Page Program Typical time Page program=600us/640us 59H 13:8 101001b E9H Byte Program Typical time, first Byte First Byte program=30us/32us 15:14 11b 5AH 18:16 100b 14H Byte Program Typical time, additional Byte Additional Byte program=2.5us/3us 23:19 00010b Chip Erase, Typical time Chip erase typical time=100s/100s 5BH 30:24 1011000b 58H Reserved 31 0b Prohibited Operations During Program Suspend 5CH 3:0 1100b ECH Prohibited Operations During Erase Suspend 7:4 1110b Reserved 5DH 8 0b 60H Program Resume to Suspend Interval Interval=64us 12:9 0000b Suspend in-progress program max latency max latency=20us/20us 15:13 011b 5EH 19:16 0110b 06H Erase Resume to Suspend Interval Interval=64us 23:20 0000b Suspend in-progress erase max latency max latency=20us/20us 5FH 30:24 0110011b 33H Suspend / Resume supported 31 0b Program Resume Instruction 60H 7:0 7AH 7AH Program Suspend Instruction 61H 15:0 75H 75H Resume Instruction 62H 23:16 7AH 7AH Suspend Instruction 63H 31:24 75H 75H |
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