HM70P02D datasheet(2/6 Pages) HMSEMI

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Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±10V,VDS=0V

±100

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.4

-0.6

-1.0

VGS=-4.5V, ID=-20A

2.3

VGS=-2.5V, ID=-20A

2.8

Drain-Source On-State Resistance

RDS(ON)

VGS=-1.8V, ID=-20A

3.8

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-20A

100

Dynamic Characteristics (Note4)

Input Capacitance

Clss

4950

Output Capacitance

Coss

380

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

290

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

100

Turn-Off Fall Time

VDD=-10V, RGEN=3Ω

VGS=-4.5V,RL=0.5Ω

Total Gate Charge

100

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=-10V,ID=-20A,

VGS=-4.5V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-20A

-1.2

Diode Forward Current

(Note 2)

-70

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = -10A

di/dt = 100A/μs

(Note3)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

HM70P02D

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