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SDURF2020CT Scheda tecnica(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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SDURF2020CT Scheda tecnica(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 2 page ![]() Features Low forward voltage drop Fast switching for high efficiency High current capability Case: ITO-220AB full plastic isolated package High surge current capability Weight: 2.1 gram approximately Polarity: As marked on diode body method 208 Mounting position: Any Terminals: Solderable per MIL-STD-202 Mechanical Data Low reverse leakage current Epoxy: UL 94V-0 rate flame retardant SDURF2020CT thru SDURF2060CT Pb Free Plating Product SDURF2020CT/SDURF2030CT/SDURF2040CT/SDURF2060CT 20Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers Application Pb Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems ITO-220AB/TO-220F-3L Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "CTR" Suffix "CTD" Suffix "CTS" Suffix "CT" .189(4.8) .406(10.3) .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .134(3.4) .165(4.2) .381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .118(3.0) Unit : inch (mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS For capacitive load, derate current by 20%. Single phase, half wave, 60Hz, resistive or inductive load. Rating at 25 ambient temperature unless otherwise specified. NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. -55 to + 150 SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR Trr CJ TJ, TSTG 140 200 400 280 600 420 600 20.0 5.0 0.98 35 100 70 2.0 UNIT V V V V A A pF nS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Peak Forward Surge Current, 8.3ms single Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @TJ=25 Typical junction Capacitance (Note 2) Operating Junction and Storage Current TC=125 Half sine-wave superimposed on rated load (JEDEC method) @ 10.0 A At Rated DC Blocking Voltage @TJ=125 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) R JC Temperature Range 200 SDURF2020CT 200 400 1.3 1.7 SDURF2040CT SDURF2060CT (Total Device 2x10A=20A) (Per Diode/Per Leg) μA μA /W ℃ ℃ ℃ ℃ 120 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Rev.09T ℃ ℃ SDURF2030CT |
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