IXFN180N10 datasheet(1/6 Pages) IXYS

Il numero della parte	IXFN180N10

Spiegazioni elettronici	Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

Logo

1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

100

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

100

V

GSS

Continuous

20

V

GSM

Transient

30

V

I

D25

T

C = 25C

180

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

720

A

I

A

T

C = 25C

180

A

E

AS

T

C = 25C3

J

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150C

5

V/ns

P

D

T

C = 25C

600

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

V

ISOL

50/60 Hz, RMS, t = 1minute

2500

V~

I

ISOL 1mA,

t = 1s

3000

V~

M

d

Mounting Torque for Base Plate

1.5/13

Nm/lb.in

Terminal Connection Torque

1.3/11.5

Nm/lb.in

Weight

30

g

IXFN180N10

V

DSS

=

100V

I

D25

=

180A

R

DS(on) 



8m



t

rr



250ns

DS98546C(02/14)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

HiPerFETTM

Power MOSFET

Features



International Standard Package



miniBLOC, with Aluminium Nitride

Isolation



Dynamic dv/dt Rating



Avalanche Rated



Fast Intrinsic Rectifier



Low R

DS(on)



Low Drain-to-Tab Capacitance



Low Package Inductance

Advantages



Easy to Mount



Space Savings

Applications



DC-DC Converters



Battery Chargers



Switch-Mode and Resonant-Mode

Power Supplies



Synchronous Rectification



Low Voltage relays



DC Chopper



Temperature and Lighting Controls

miniBLOC

E153432

G

D

S

G = Gate

D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

100

V

GS(th)

V

DS = VGS, ID = 8mA

2.0

4.0

V

I

GSS

V

GS = 20V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

100

A

T

J = 125C

2 mA

R

DS(on)

V

GS = 10V, ID = 90A, Note 1

8 m



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