HM2521 datasheet(4/6 Pages) HMSEMI

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6. ELECTRICAL CHARACTERISTICS

6.1 Absolute Maximum Rating

Symbol

Parameter

Rating

Unit

VDD - VSS

Supply voltage of logic control circuit

-0.5 ~ +7.5

VCC

Supply voltage of output power MOSFET

10.0

IOUT-PEAK

Output peak current

3.5

θJA

Thermal resistance

(Junction to Ambient)

ESOP-8

°C/W

Power dissipation

ESOP-8

2.5

Operating ambient temperature

-40 ~ +85

°C

Operating junction temperature

+160

°C

TST

Storage temperature

-55 ~ +160

°C

6.2 DC Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Unit

Condition

VDD

Operating voltage (Logic)

1.8

6.8

VCC

Operating voltage (MOSFET)

1.8

9.6

ISB

Standby current

0.1

IN1=IN2=0

IOP

Operating

current

VDD = VCC = 3.0V

370

IN1=1, IN2=0 or

IN1=0, IN2=1 or

IN1=1, IN2=1

VDD = VCC = 6.0V

650

IIH

Input high current

(12kΩ pull-low resistance)

260

VIH = 3.0V

510

VIH = 6.0V

VIH

Input high voltage

VIL

Input low voltage

0.8

RON

Output resistance

(ESOP-8 Package)

0.25

IOUT = 500mA

0.29

IOUT = 1200mA

0.32

IOUT = 1800mA

IOUT

Output continuous current

(* with PCB heat dissipation)

1800

2500*

ESOP-8

IPULSE

Pulsed drain current

7.0

Pulse width < 20ms

TRISE

Output rise time

400

PWM=20kHz, Duty=50%

TFALL

Output fall time

150

TRP

Input-to-Output response time

530

TTSD

Thermal shutdown (TSD)

160

°C

Junction temperature

TTSDH

Thermal shutdown hysteresis

°C

(VDD=3.0V, VCC=6.0V, TA=25ºC, unless otherwise specified)

HM25

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