GaAs, pHEMT, MMIC,1/2 W,

20 GHz to 44 GHz, Power Amplifier

Data Sheet

ADPA7002CHIP

Rev. 0

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FEATURES

Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz)

Gain: 15 dB (typical at 34 GHz to 44 GHz)

IP3: 40 dBm (typical)

Supply voltage: 5 V at 600 mA

Die size: 2.75 mm × 1.805 mm × 0.1 mm

APPLICATIONS

Military and space

Test instrumentation

FUNCTIONAL BLOCK DIAGRAM

Figure 1.

GENERAL DESCRIPTION

The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), distributed power

amplifier that operates from 20 GHz to 44 GHz. The amplifier

provides 15 dB of small signal gain, 28 dBm output power at

1 dB gain compression (P1dB), and a typical output third-order

intercept (IP3) of 40 dBm. The amplifier requires 600 mA from

also features inputs/outputs (I/Os) that are internally matched to

50 Ω, and facilitates integration into multichip modules (MCMs).

All data is taken with the on substrate chip connected via two

wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils)

long.

RFOUT

RFIN

ADPA7002CHIP

GND

VDET

VREF