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OPA835 Scheda tecnica(PDF) 4 Page - Texas Instruments |
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OPA835 Scheda tecnica(HTML) 4 Page - Texas Instruments |
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4 / 21 page ![]() 4 OPA2834 SBOS973 – JUNE 2019 www.ti.com Product Folder Links: OPA2834 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) VS is the total supply voltage given by VS = VS+ – VS–. (3) Staying below this ± supply turnon edge rate prevents the edge-triggered ESD absorption device across the supply pins from turning on. (4) Continuous input current limit for both the ESD diodes to supply pins and amplifier differential input clamp diodes. The differential input clamp diodes limit the voltage across them to 1 V with this continuous input current flowing through them. (5) Long-term continuous current for electromigration limits. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VS– to VS+ Supply voltage (total bipolar supplies)(2) 5.5 V Supply turnon/off maximum dV/dT(3) 1 V/µs VI Input voltage VS– – 0.5 VS+ + 0.5 V VID Differential input voltage ±1 V II Continuous input current(4) ±10 mA IO Continuous output current(5) ±20 mA Continuous power dissipation See Thermal Information TJ Maximum junction temperature 150 °C TA Operating free-air temperature –40 125 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V Charged-device model (CDM), per JEDEC specification JESD22(2) ±1000 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VS+ Single-supply positive voltage 2.7 5 5.4 V TA Ambient temperature –40 25 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) OPA2834 UNIT DGK (VSSOP) 8 PINS RθJA Junction-to-ambient thermal resistance 192.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 79.3 °C/W RθJB Junction-to-board thermal resistance 114.3 °C/W ΨJT Junction-to-top characterization parameter 15.7 °C/W YJB Junction-to-board characterization parameter 112.6 °C/W |
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