FJB102TM datasheet(2/7 Pages) ONSEMI

2 / 7 page

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FJB102 Rev. 1.1.0

December 2014

FJB102

NPN High-Voltage Power Darlington Transistor

Features

• High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum)

• Low Collector-Emitter Saturation Voltage

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Note:

1. Pulse test: pw ≤ 300 µs, duty cycle ≤ 2%.

Part Number

Top Mark

Package

Packing Method

FJB102TM

FJB102

TO-263 2L (D2PAK)

Tape and Reel

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

100

VCEO

Collector-Emitter Voltage

100

VEBO

Emitter-Base Voltage

Collector Current (DC)

ICP

Collector Current (Pulse)(1)

Base Current (DC)

Collector Dissipation (TC = 25°C)

Junction Temperature

150

°C

TSTG

Storage Temperature Range

-65 to 150

°C

1.Base

2.Collector

3.Emitter

D2-PAK

R 1 10k Ω

≅

R 2 0.6k Ω

≅

Equivalent Circuit

FJB102TM Scheda tecnica(PDF) 2 Page - ON Semiconductor

FJB102TM Scheda tecnica(HTML) 2 Page - ON Semiconductor

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Scheda tecnica Scarica

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