4

NPN Multi-Chip General Purpose Amplifier

Absolute Maximum Ratings*

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

80

V

Collector-Base Voltage

80

V

Emitter-Base Voltage

4.0

V

Collector Current - Continuous

500

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

This device is designed for general purpose amplifier applications at collector

currents to 300 mA. Sourced from Process 33.

© 1998 Fairchild Semiconductor Corporation

Thermal Characteristics

T

A

= 25°C unless otherwise noted

FMBA06

Symbol

Characteristic

Max

Units

FMBA06

Total Device Dissipation

Derate above 25

°C

700

5.6

mW

mW/

°C

Thermal Resistance, Junction to Ambient

180

°C/W

SuperSOT

Mark: .1G

Dot denotes pin #1

C1

E1

C2

B1

E2

B2

pin #1