2SA1385-Z datasheet(1/2 Pages) ISC

Il numero della parte	2SA1385-Z

Spiegazioni elettronici	isc Silicon PNP Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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isc Silicon PNP Power Transistor

2SA1385-Z

DESCRIPTION

·

High Collector-Emitter Breakdown Voltage

: V(BR)CEO= -60V(Min)

·

Excellent linearity of hFE

·

Low collector-to-emitter saturation voltage

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for audio frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-5

A

ICM

Pulse Collector Current

-7

A

PC

Collector Power Dissipation

@ TC=25℃

10

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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