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BT169DW Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BT169DW
Spiegazioni elettronici  isc Thyristors
PDF  1 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BT169DW Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

  BT169DW Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
BT169DW
DESCRIPTION
·
With SOT-223 packaging
·
High surge capability
·
Glass passivated junctions and center gate fire for greater
parameter uniformity and stability
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
400
V
VRRM
Repetitive peak off-state voltage
400
V
IT(AV)
Average on-state current
0.63
A
IT(RMS)
RMS on-state current
1
A
PG(AV)
Average gate power
0.1
W
ITSM
Non-repetitive peak on-state current
8
A
Tj
Operating junction temperature
-40~110
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak off-state voltage VRRM=400V
5
μ
A
Repetitive peak reverse voltage
VRRM=400V;Tj=110℃
100
IDRM
Repetitive peak reverse current
VRRM=400V
5
μ
A
Repetitive peak off-state current
VDRM=400V;Tj=110℃
100
IGT
Gate trigger current
VD= 12V; IT= 10mA
120
μ
A
VTM
On-state voltage
IT=2A
1.5
V
IH
Holding current
IGT=0.5mA ,VD=12V
5
mA
VGT
Gate trigger voltage
VD= 12V; IT= 10mA
0.8
V


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