DAN222 datasheet(1/8 Pages) ONSEMI

Il numero della parte	DAN222

Spiegazioni elettronici	COMMON CATHODE SILICON DUAL SWITCHING DIODE

PDF	8 Pages

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Produttore elettronici	ONSEMI [ON Semiconductor]

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1 / 8 page

March, 2000 – Rev. 2

1

Publication Order Number:

DAN222/D

DAN222

Common Cathode Silicon

Dual Switching Diode

This Common Cathode Silicon Epitaxial Planar Dual Diode is

designed for use in ultra high speed switching applications. This

device is housed in the SOT–416/SC–90 package which is designed

for low power surface mount applications, where board space is at a

premium.

• Fast t

rr

• Low C

D

• Available in 8 mm Tape and Reel

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Value

Unit

Reverse Voltage

VR

80

Vdc

Peak Reverse Voltage

VRM

80

Vdc

Forward Current

IF

100

mAdc

Peak Forward Current

IFM

300

mAdc

Peak Forward Surge Current

IFSM(1)

2.0

Adc

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation

PD

150

mW

Junction Temperature

TJ

150

°C

Storage Temperature Range

Tstg

– 55 to +150

°C

1. t = 1

µS

Device

Package

Shipping

ORDERING INFORMATION

http://onsemi.com

SOT–416

CASE 463

STYLE 3

DEVICE MARKING

N9

DAN222

SOT–416

3000/Tape & Reel

CATHODE

3

12

ANODE

SOT–416/SC–90 PACKAGE

COMMON CATHODE

DUAL SWITCHING DIODE

SURFACE MOUNT

1

2

3

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