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BU508DF Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU508DF Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistors BU508DF DESCRIPTION · High Switching Speed · High Voltage · Built-in Integrated Diode · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @TC=25℃ 34 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.7 K/W |
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