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AS7C3513 Scheda tecnica(PDF) 4 Page - Alliance Semiconductor Corporation

Il numero della parte AS7C3513
Spiegazioni elettronici  5V/3.3V 32Kx6 CMOS SRAM
PDF  10 Pages
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Produttore elettronici  ALSC [Alliance Semiconductor Corporation]
Homepage  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C3513 Scheda tecnica(HTML) 4 Page - Alliance Semiconductor Corporation

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AS7C513
AS7C3513
®
3/23/01; v.1.0
Alliance Semiconductor
P. 4 of 10
Read cycle (over the operating range) 3,9
Shaded areas indicate advance information.
Key to switching waveforms
Read waveform 1 (address controlled)3,6,7,9
Read waveform 2 (CE, OE, UB, LB controlled)3,6,8,9
Parameter
Symbol
-12
-15
-20
Unit
Notes
MinMax
MinMax
Min
Max
Read cycle time
tRC
12
–
15
–
20
–
ns
Address access time
tAA
–12–15
–
20
ns
3
Chip enable (CE) access time
tACE
–12–15
–
20
ns
3
Output enable (OE) access time
tOE
–6
–7
–
8
ns
Output hold from address change
tOH
3–
4
–
4
–
ns
5
CE Low to output in low Z
tCLZ
0
–
0
–
0
–
ns
4, 5
CE High to output in high Z
tCHZ
–6
–7
–
8
ns
4, 5
OE Low to output in low Z
tOLZ
0
–
0
–
0
–
ns
4, 5
Byte select access time
tBA
–6
–7
–
8
ns
Byte select Low to low Z
tBLZ
0
–
0
–
0
–
ns
4,5
Byte select High to high Z
tBHZ
–6
–7
–
9
ns
4,5
OE High to output in high Z
tOHZ
–6
–7
–
9
ns
4, 5
Power up time
tPU
0
–
0
–
0
–
ns
4, 5
Power down time
tPD
–12–15
–
20
ns
4, 5
Undefined output/don’t care
Falling input
Rising input
tOH
tAA
tRC
tOH
Data OUT
Address
Data valid
Previous data valid
Data valid
tRC
tAA
tBLZ
tBA
tOE
tOLZ
tOH
tOHZ
tHZ
tBHZ
tACE
tLZ
Address
OE
CE
LB, UB
Data OUT



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